单晶Se纳米线的制备及表征

Preparation and Characterization of Single Crystal Se Nanowires

摘要: 用化学气相沉积的方法制备了单晶Se纳米线,并用TEM、HRTEM、SAED、XRD和EDX等分析手段对其形貌和结构进行了表征.结果表明:单晶Se纳米线为三方相结构,并且其结晶性能良好,其生长方向是沿着三方相Se的001方向生长.

Abstract: Single crystal Se nanowires were prepared by chemical vapor deposition process(CVD) methods.The morphologies and structure were characterized using TEM,HRTEM,SAED,XRD and EDX.It was shown that the Se nanowires with high crystallinity were trigonal selenium.It was also shown that the Se nanowires grown along direction.