电化学法制备甲基对硫磷分子印迹膜修饰电极及其应用研究

Investigation on Electrochemical Preparation of Methyl Parathion Imprinted Film Modified Electrode a

摘要: 以苯基三乙氧基硅烷（PTEOS）为功能单体,四乙氧基硅烷为硅源,甲基对硫磷为模板化合物,通过电化学法调节电极表面微区呈强碱性,促进硅氧烷水解,制备了甲基对硫磷分子印迹膜修饰玻碳电极,研究了甲基对硫磷在该修饰电极上的电化学行为.结果表明,该修饰电极能快速、高选择性识别甲基对硫磷,与非印迹电极相比,甲基对硫磷峰电流显著增大,峰形更好.在最佳条件下,氧化峰电流与甲基对硫磷浓度在1.0×10-8～1.0×10-5mol.L-1范围内呈良好的线性关系,线性方程为Ip（μA）=1.2839c（μmol.L-1）+0.4386（R=0.9998）,检出限为9.2×10-9mol.L-1.将此法用于苹果样品中甲基对硫磷的测定,结果令人满意.

Abstract: Molecularly imprinted porous silicate film modified glassy carbon electrode was prepared by electrochemical modulation of pH at the electrode/solution interface to promote controlled gelification of teraethylorthosilicate（TEOS）sol with constant potential using methyl parathion（MP）as template and phenyltriethoxysilane（PTEOS）as functional monomer.The molecularly imprinted film was characterized with scanning electron microscopy,X-ray diffraction and electrochemical techniques.Electrochemcial behav...