B i3+掺杂对 YAG :C e3 +荧光粉发光性能的影响

The Photoluminescence of Bi3+Doping YAG:Ce3+Phosphors

  • 摘要: B i3+ 掺杂Y A G : C e3+ 荧光粉由溶胶凝胶法合成 . 结构和结晶过程分析表明, 其结晶程度良好 .光谱分析表明, B i3+ 的掺杂可以使 C e 3+ 的荧光峰位红移 .C e3+ 的荧光强度随 B i 3+ 掺杂浓度的增加而增加, 这是由 B i 3+ 与C e3+ 之间的能量传递引起的 .之后随着掺杂浓度的继续增加 C e3+ 的荧光强度减小, 这是由浓度猝灭所致 .

     

    Abstract: The Bi3+doping YAG:Ce3+phosphors were successfully synthesized. The red shift of Bi3+doping YAG:Ce3+ phosphor’s photoluminescence (PL) peak was observed in the PL spectra. The intensity of PL peaks was enhanced with the increasing of Bi3+ concentration and then decreased with higher concentration of Bi3+. The effect of energy transfer between Bi3+,Ce3+and the concentration quenching were discussed

     

/

返回文章
返回